The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2015

Filed:

Oct. 07, 2014
Applicants:

Shigenobu Maeda, Seongnam-si, KR;

Hidenobu Fukutome, Seongnam-si, KR;

Young-gun Ko, Seongnam-si, KR;

Joo-hyun Jeong, Yongin-si, KR;

Inventors:

Shigenobu Maeda, Seongnam-si, KR;

Hidenobu Fukutome, Seongnam-si, KR;

Young-Gun Ko, Seongnam-si, KR;

Joo-Hyun Jeong, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/02532 (2013.01); H01L 21/02587 (2013.01); H01L 21/02636 (2013.01); H01L 21/02658 (2013.01);
Abstract

A semiconductor device can include an active region having a fin portion providing a channel region between opposing source and drain regions. A gate electrode can cross over the channel region between the opposing source and drain regions and first and second strain inducing structures can be on opposing sides of the gate electrode and can be configured to induce strain on the channel region, where each of the first and second strain inducing structures including a respective facing side having a pair of {111} crystallographically oriented facets.


Find Patent Forward Citations

Loading…