The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Oct. 18, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Ho-Jin Jeon, Yongin-si, KR;
Young-Gun Ko, Seongnam-si, KR;
Gi-Gwan Park, Suwon-si, KR;
Je-Min Yoo, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0207 (2013.01); H01L 27/0886 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/7846 (2013.01); H01L 29/7848 (2013.01); H01L 21/823412 (2013.01); H01L 21/823807 (2013.01);
Abstract
Semiconductor devices are provided. A semiconductor device includes a first insulating material in a first fin. The semiconductor device includes a second insulating material in a second fin. The first and second insulating materials have different respective sizes. For example, in some embodiments, the first and second insulating materials have different respective widths and/or depths in the first and second fins, respectively.