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Gi-Gwan Park

This inventor holds 39 USPTO granted patents and 5 published patent applications, primarily in Semiconductor Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2017-2024.

USPTO Granted Patents = 39 (Patent Applications = 5)

% Patents Active = 100.0

Average Co-Inventor Count = 3.9

ph-index = 8

Forward Citations = 160(Granted Patents)

Location History:

Seoul, KR (2018)
Hwaseong-si, KR (2018 - 2021)
Suwon-si, KR (2017 - 2024)

Company Filing History:

39 out of 132,107

Samsung Electronics Co., Ltd.

patents

Years Active: 2017-2024

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Areas of Expertise:

Semiconductor Device

Fin Field Effect Transistor

Integrated Circuit

Gate Electrode

Material Layers

Active Region

Stress Inducing Layers

Fabrication Method

Device Isolation

Multigate MOSFET

Insulating Materials

SiOCN Material

39 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11956937 - Semiconductor device having fin-type pattern with varying widths along a center vertical line thereof (2024-04-09),

2. 11367620 - Method of fabricating semiconductor device (2022-06-21),

3. 11069685 - Semiconductor device (2021-07-20),

4. 11038062 - Semiconductor device with a fin-shaped active region and a gate electrode (2021-06-15),

5. 11037926 - Semiconductor device (2021-06-15),

6. 10796919 - Method of fabricating semiconductor device (2020-10-06),

7. 10707348 - Fin field effect transistors having liners between device isolation layers and active areas of the device (2020-07-07),

8. 10685957 - Semiconductor devices and methods of manufacturing the same (2020-06-16),

9. 10580891 - Semiconductor device and method for fabricating the same (2020-03-03),

10. 10541127 - Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devices (2020-01-21),

11. 10483399 - Integrated circuit device (2019-11-19),

12. 10461189 - Fin field effect transistors having liners between device isolation layers and active areas of the device (2019-10-29),

13. 10431685 - Semiconductor device including gate having dents and spacer protrusions extending therein (2019-10-01),

14. 10361309 - Semiconductor device having a fin-shaped active region and a gate electrode (2019-07-23),

15. 10361202 - Multigate metal-oxide semiconductor field effect transistor (2019-07-23),

Title: The Innovative Journey of Inventor Gi-Gwan Park

Introduction: Gi-Gwan Park, a talented male inventor hailing from Suwon-si, South Korea, has made significant contributions to the field of innovation with his creative ideas and groundbreaking inventions.

Latest Patents: Gi-Gwan Park holds several patents in various technological fields, showcasing his versatility and ingenuity in creating novel solutions to complex problems.

Career Highlights: Throughout his illustrious career, Gi-Gwan Park has been recognized for his exceptional work in developing cutting-edge technologies that have had a profound impact on industries such as electronics, healthcare, and transportation.

Collaborations: Gi-Gwan Park has collaborated with leading research institutions, universities, and companies to further his research and bring his inventions to market, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: In conclusion, Gi-Gwan Park stands as a shining example of an innovative inventor whose passion for creating transformative technologies has left a lasting legacy in the world of innovation.

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