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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10541127 B1

PDFFull Text
Date of Patent:
Jan. 21, 2020

Filed:

Oct. 28, 2016

Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devices

Applicants:

Yong-suk Tak, Seoul, KR;

Gi-gwan Park, Suwon-si, KR;

Jin-bum Kim, Seoul, KR;

Bon-young Koo, Suwon-si, KR;

Ki-yeon Park, Hwaseong-si, KR;

Tae-jong Lee, Hwaseong-si, KR;

Inventors:

Yong-suk Tak, Seoul, KR;

Gi-gwan Park, Suwon-si, KR;

Jin-bum Kim, Seoul, KR;

Bon-young Koo, Suwon-si, KR;

Ki-yeon Park, Hwaseong-si, KR;

Tae-jong Lee, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Elizabeth A Burkhart

Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02126 (2013.01); C23C 16/45529 (2013.01); C23C 16/45542 (2013.01); C23C 16/50 (2013.01); H01L 21/0228 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/28088 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/1608 (2013.01); H01L 29/42392 (2013.01); H01L 29/4966 (2013.01); H01L 29/4983 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01); H01L 29/78618 (2013.01); H01L 29/78651 (2013.01); H01L 29/78681 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01);
Abstract

A material layer, a semiconductor device including the material layer, and methods of forming the material layer and the semiconductor device are provided herein. A method of forming a SiOCN material layer may include supplying a silicon source onto a substrate, supplying a carbon source onto the substrate, supplying an oxygen source onto the substrate, supplying a nitrogen source onto the substrate, and supplying hydrogen onto the substrate. When a material layer is formed according to a method of the present inventive concepts, a material layer having a high tolerance to wet etching and/or good electric characteristics may be formed, and may even be formed when the method is performed at a low temperature.

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