The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Oct. 06, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Dong-Hyuk Kim, Seongnam-si, KR;
Gi-Gwan Park, Suwon-si, KR;
Tae-Young Kim, Hwaseong-si, KR;
Dong-Suk Shin, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/02057 (2013.01); H01L 21/02658 (2013.01); H01L 21/02661 (2013.01); H01L 21/31116 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01);
Abstract
Methods for fabricating semiconductor devices include forming a fin-type pattern protruding on a substrate, forming a gate electrode intersecting the fin-type pattern, forming a first recess adjacent to the gate electrode and within the fin-type pattern by using dry etching, forming a second recess by treating a surface of the first recess with a surface treatment process including a deposit process and an etch process, and forming an epitaxial pattern in the second recess.