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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12757368 B1

PDFFull Text
Date of Patent:
Oct. 06, 2026

Filed:

Mar. 13, 2024

Semiconductor device having an asymmetric fin-type patterns formed between two symmetric fin-type patterns with varying width along center vertical line of the fins

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ki-Il Kim, Suwon-si, KR;

Jung-Gun You, Ansan-si, KR;

Gi-Gwan Park, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Anh D Mai

Int. Cl.
CPC ...
H10D 30/62 (2025.01); H10B 10/00 (2023.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/80 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10B 10/12 (2023.02); H10D 30/6211 (2025.01); H10D 30/6212 (2025.01); H10D 30/6213 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/80 (2025.01); H10D 84/853 (2025.01);
Abstract

A semiconductor device can include a field insulating film on a substrate and a fin-type pattern of a particular material, on the substrate, having a first sidewall and an opposing second sidewall. The fin-type pattern can include a first portion of the fin-type pattern that protrudes from an upper surface of the field insulating film and a second portion of the fin-type pattern disposed on the first portion. A third portion of the fin-type pattern can be disposed on the second portion where the third portion can be capped by a top rounded surface of the fin-type pattern and the first sidewall can have an undulated profile that spans the first, second and third portions.

Find Patent Forward Citations

Kim, Ki-Il. (2026). Semiconductor device having an asymmetric fin-type patterns formed between two symmetric fin-type patterns with varying width along center vertical line of the fins (U.S. Patent No. 12757368). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12757368

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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