Ansan, South Korea

Jung-Gun You

This inventor holds 40 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Devices. Top assignees: Samsung Electronics Co., Ltd., Samsung Electronics Ltd.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jung-Gun You. Retrieved from https://idiyas.com/inventor/jung-gun-you

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 40 

% Patents Active = 97.5

Average Co-Inventor Count = 3.5

ph-index = 5

Forward Citations = 97(Granted Patents)


Location History:

  • Anyang-Si, KR (2017)
  • Suwon-si, KR (2017)
  • Gyeonggi-do, KR (2021)
  • Ansan-si, KR (2017 - 2024)

Company Filing History:


Years Active: 2017-2026

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Areas of Expertise:
Fin-Type Pattern
Gate Structures
Vertical Field Effect Transistor
Asymmetric Fin-Shaped Pattern
Integrated Circuit
Dummy Gates
Source/Drain Regions
Fabricating Methods
Stress Inducing Layers
Methods of Manufacturing
Semiconductor Device
40 patents (USPTO):Explore Patents

Title: Innovations by Jung-Gun You: Pioneering Semiconductor Devices

Introduction

Jung-Gun You, an accomplished inventor based in Ansan-si, South Korea, has significantly contributed to the field of semiconductor technology. With a remarkable portfolio of 39 patents, he is recognized for his innovative approaches to designing advanced semiconductor devices that propel the industry forward.

Latest Patents

Among Jung-Gun You's latest innovations are two noteworthy patents. The first involves a "Semiconductor device having fin-type pattern with varying widths along a center vertical line thereof." This invention features a semiconductor device including a field insulating film on a substrate, with a fin-type pattern that has a unique design. This fin-type pattern includes multiple portions, each with specific profiles that enhance the device's functionality.

The second patent focuses on "Semiconductor devices having gate structures with skirt regions." This semiconductor device comprises an active fin that vertically protrudes from the substrate and features a gate structure that intersects the active fin at various widths, improving performance and efficiency.

Career Highlights

Jung-Gun You works at Samsung Electronics Co., Ltd., a global leader in technology and innovation. His work at one of the most recognized companies in the semiconductor industry showcases his commitment to advancing technology. His patents reflect his dedication to creating more efficient and effective semiconductor solutions.

Collaborations

Throughout his career, Jung-Gun You has collaborated with talented colleagues, including Gi-Gwan Park and Sug-Hyun Sung. These collaborations have undoubtedly contributed to the innovative breakthroughs he has achieved, demonstrating the power of teamwork in research and development.

Conclusion

Jung-Gun You's contributions to semiconductor technology through his numerous patents, innovative designs, and collaborative spirit solidify his position as a leading inventor in the field. His ongoing work at Samsung Electronics Co., Ltd. promises to further influence the future of semiconductor devices and innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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