logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10211204 B1

PDFFull Text
Date of Patent:
Feb. 19, 2019

Filed:

Sep. 19, 2017

Semiconductor devices and fabricating methods thereof

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jung-Gun You, Ansan-si, KR;

Sug-Hyun Sung, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Ward and Smith, P.A.

Primary Examiner:

Peniel M Gumedzoe

Assistant Examiner:

Christopher Johnson

Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/7854 (2013.01);
Abstract

Provided is a semiconductor device and a fabricating method thereof. The semiconductor device includes a first trench having a first depth to define a fin, a second trench formed directly adjacent the first trench having a second depth that is greater than the first depth, a field insulation layer filling a portion of the first trench and a portion of the second trench, and a protrusion structure protruding from a bottom of the first trench and being lower than a surface of the field insulation layer.

Find Patent Forward Citations

You, Jung-Gun. (2019). Semiconductor devices and fabricating methods thereof (U.S. Patent No. 10211204). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10211204

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…