The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Aug. 07, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Sung-Il Park, Suwon-si, KR;
Beom-Jin Park, Hwaseong-si, KR;
Yun-Il Lee, Anyang-si, KR;
Jung-Gun You, Ansan-si, KR;
Dong-Hun Lee, Anyang-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/788 (2006.01); H01L 27/11556 (2017.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 27/12 (2006.01); H01L 27/118 (2006.01); H01L 27/07 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/823418 (2013.01); H01L 21/823487 (2013.01); H01L 27/088 (2013.01); H01L 27/0924 (2013.01); H01L 27/11556 (2013.01); H01L 29/4232 (2013.01); H01L 29/66666 (2013.01); H01L 29/7889 (2013.01); H01L 27/0738 (2013.01); H01L 27/1203 (2013.01); H01L 2027/11866 (2013.01);
Abstract
A vertical transistor structure includes a first transistor and a second transistor. The first transistor includes a first lower electrode connected to a second upper electrode of the second transistor, and a second upper electrode connected to a first lower electrode of the second transistor. The first transistor also includes a gate electrode connected to a gate electrode of the second transistor.