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For the Inventor, By the Inventor

Seoul, South Korea

Tae-hee Choe

USPTO Granted Patents = 15

Average Co-Inventor Count = 5.1

ph-index = 10

Forward Citations = 358(Granted Patents)


Company Filing History:

goldMedal15 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2003-2010

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15 patents (USPTO):Explore Patents
1. 7642140 - CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming same (2010-01-05),
2. 7195987 - Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers therein (2007-03-27),
3. 6917085 - Semiconductor transistor using L-shaped spacer (2005-07-12),
4. 6914301 - CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and methods of forming same (2005-07-05),
5. 6881630 - Methods for fabricating field effect transistors having elevated source/drain regions (2005-04-19),
6. 6881621 - Method of fabricating SOI substrate having an etch stop layer, and method of fabricating SOI integrated circuit using the same (2005-04-19),
7. 6794306 - Semiconductor device having gate all around type transistor and method of forming the same (2004-09-21),
8. 6750532 - CMOS semiconductor device and method of manufacturing the same (2004-06-15),
9. 6693013 - Semiconductor transistor using L-shaped spacer and method of fabricating the same (2004-02-17),
10. 6670677 - SOI substrate having an etch stop layer and an SOI integrated circuit fabricated thereon (2003-12-30),
11. 6633066 - CMOS integrated circuit devices and substrates having unstrained silicon active layers (2003-10-14),
12. 6605847 - Semiconductor device having gate all around type transistor and method of forming the same (2003-08-12),
13. 6580134 - Field effect transistors having elevated source/drain regions (2003-06-17),
14. 6524902 - Method of manufacturing CMOS semiconductor device (2003-02-25),
15. 6518645 - SOI-type semiconductor device and method of forming the same (2003-02-11),

Title: Innovator Tae-hee Choe: Pioneering CMOS Integrated Circuit Technology

Introduction

Tae-hee Choe is an accomplished inventor based in Seoul, South Korea, renowned for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 15 patents, his work has greatly advanced the development of CMOS integrated circuit devices, paving the way for innovations in electronics and technology.

Latest Patents

One of Tae-hee Choe's most recent patents revolves around a novel CMOS integrated circuit device and substrate featuring buried silicon germanium layers. His invention includes an electrically insulating layer along with an unstrained silicon active layer positioned atop it. An insulated gate electrode is strategically placed on the unstrained silicon active layer, while a silicon-germanium (SiGe) layer nests between these two main components. The SiGe layer establishes a first junction with the active silicon layer, exhibiting a graded concentration of germanium that decreases toward the surface. This meticulous design affords unique electrical properties, allowing for enhanced performance in integrated circuits, specifically by controlling the doping profiles and achieving desired threshold voltages.

Career Highlights

At present, Tae-hee Choe is associated with Samsung Electronics Co., Ltd., a leading global company in the field of technology and innovation. His extensive experience and array of patents showcase his pivotal role in advancing semiconductor research and application. Throughout his career, Choe has consistently focused on enhancing the functionality and reliability of CMOS devices, contributing significantly to the electronics sector.

Collaborations

In his professional journey, Tae-hee Choe collaborates with talented individuals such as Hwa-sung Rhee and Nae-in Lee, who share his commitment to innovation and technological advancement. These collaborations enhance the research environment, fostering creativity and leading to groundbreaking developments in semiconductor technology.

Conclusion

Tae-hee Choe stands out as a visionary inventor in the realm of CMOS integrated circuit technology. His patents reflect a deep understanding of semiconductor materials, particularly the enhancement of silicon germanium layers. As he continues to innovate with the support of his team at Samsung Electronics Co., Ltd., the impact of his work will undoubtedly resonate throughout the technology industry, inspiring future endeavors in electronics and beyond.

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