The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
May. 18, 2001
Applicants:
Dong-ho Ahn, Yongin-shi, KR;
Ho-kyu Kang, Yongin-shi, KR;
Geum-jong Bae, Yongin-shi, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Kyungki-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/76 ;
U.S. Cl.
CPC ...
Abstract
Disclosed herein are various methods for preventing bending of a patterned SOI layer during trench sidewall oxidation, the methods comprising providing a patterned SOI layer having at least one trench, said patterned SOI layer disposed upon an underlying buried silicon oxide layer; and blocking diffusion of oxygen between said patterned SOI and buried silicon oxide layer.
Ahn, Dong-Ho. (2005). Method of preventing semiconductor layers from bending and semiconductor device formed thereby (U.S. Patent No. 6881645). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6881645
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile