The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Jan. 13, 2003
Geum-jong Bae, Suwon, KR;
Nae-in Lee, Seoul, KR;
Ki-chul Kim, Suwon, KR;
Hwa-sung Rhee, Seoul, KR;
Sang-su Kim, Suwon, KR;
Jung-il Lee, Gimcheon, KR;
Geum-jong Bae, Suwon, KR;
Nae-in Lee, Seoul, KR;
Ki-chul Kim, Suwon, KR;
Hwa-sung Rhee, Seoul, KR;
Sang-su Kim, Suwon, KR;
Jung-il Lee, Gimcheon, KR;
Samsung Electronics Co., Ltd., Kyungki-Do, KR;
Abstract
A semiconductor device having a gate with a negative slope and a method of manufacturing the same. A poly-SiGe layer with a Ge density profile which decreases linearly from the bottom of the gate toward the top of the gate is formed and a poly-SiGe gate having a negative slope is formed by patterning the poly-SiGe layer. It is possible to form a gate whose bottom is shorter than its top defined by photolithography by taking advantage of the variation of etching characteristics with Ge density when patterning. Accordingly, the gate is compact enough for a short channel device and gate resistance can be reduced.