The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Feb. 02, 2005
Ki-chul Kim, Suwon-si, KR;
Geum-jong Bae, Incheon-si, KR;
Byoung-jin Lee, Seoul, KR;
Sang-su Kim, Suwon-si, KR;
Ki-Chul Kim, Suwon-si, KR;
Geum-Jong Bae, Incheon-si, KR;
Byoung-jin Lee, Seoul, KR;
Sang-Su Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A non-volatile memory device includes a pair of source/drain regions disposed in a semiconductor substrate, having a channel region between them. A charge storage oxide layer is disposed on the channel region and overlaps part of each of the pair of source/drain regions. A gate electrode is disposed on the charge storage oxide layer. At least one halo implantation region is formed in the semiconductor substrate adjacent to one of the pair of source/drain regions, and overlapping the charge storage oxide layer. A program operation is performed by trapping electrons in the charge storage oxide layer located near the source/drain region where the halo ion implantation region is formed, and an erase operation is performed by injecting holes into the charge storage oxide layer located near the source/drain region where the halo ion implantation region is formed.