Byoung-jin Lee

Title: Byoung-jin Lee: Innovator in Non-Volatile Memory Technology

Introduction

Byoung-jin Lee is a distinguished inventor based in Seoul, South Korea, known for his significant contributions to the field of non-volatile memory devices. With a total of seven patents to his name, Lee has been instrumental in advancing technology that enhances data storage capacities and functionalities in electronic devices.

Latest Patents

Among his notable inventions, Lee's latest patents include innovative designs and methods for fabricating non-volatile memory devices. One of them describes a non-volatile memory device featuring a buried control gate. The effective channel length of this control gate is strategically increased to prevent punchthrough, while the charge storage region is enlarged to achieve a sizable storage capacity. The fabrication method involves forming the control gate within a trench in a semiconductor substrate, enabling multi-level cell operation due to self-aligning charge-storing regions.

Another patent presents a non-volatile memory device with an asymmetric channel structure. This device incorporates a semiconductor substrate, a source region, and a drain region doped with n-type impurities. The innovative trapping structure contains a tunneling layer that facilitates the tunneling of charge carriers, combined with a charge trapping layer that retains these carriers, thereby optimizing memory performance.

Career Highlights

Byoung-jin Lee has established himself as a key figure at Samsung Electronics Co., Ltd., where he has dedicated his expertise to the research and development of advanced memory technologies. His work has greatly influenced the evolution of non-volatile memory systems, leading to improvements in speed, efficiency, and reliability.

Collaborations

Throughout his career, Lee has worked alongside talented colleagues such as In-Wook Cho and Ki-chul Kim. Together, they have collaborated on innovative projects that have significantly enhanced the capabilities of memory devices, reinforcing their position within the tech industry.

Conclusion

Byoung-jin Lee's innovative spirit and dedication to advancing non-volatile memory technology have made him a vital contributor to the field. His patents not only reflect his technical prowess but also promise to have a lasting impact on the electronics industry, paving the way for more efficient and reliable data storage solutions.