The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Jul. 31, 2008
Ki-chul Kim, Suwon-si, KR;
Geum-jong Bae, Incheon Metropolitan, KR;
In-wook Cho, Yongin-si, KR;
Byoung-jin Lee, Seoul, KR;
Jin-hee Kim, Seongnam-si, KR;
Ki-chul Kim, Suwon-si, KR;
Geum-jong Bae, Incheon Metropolitan, KR;
In-wook Cho, Yongin-si, KR;
Byoung-jin Lee, Seoul, KR;
Jin-hee Kim, Seongnam-si, KR;
Abstract
In a non-volatile memory device with a buried control gate, the effective channel length of the control gate is increased to restrain punchthrough, and a region for storing charge is increased for attaining favorably large capacity. A method of fabricating the memory device includes forming the control gate within a trench formed in a semiconductor substrate, and forming charge storing regions in the semiconductor substrate on both sides of the control gate in a self-aligning manner, thereby allowing for multi-level cell operation.