The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Jul. 18, 2005
Ki-chul Kim, Suwon-si, KR;
Geum-jong Bae, Incheon Metropolitan, KR;
In-wook Cho, Yongin-si, KR;
Byoung-jin Lee, Seoul, KR;
Jin-hee Kim, Seongnam-si, KR;
Sang-su Kim, Suwon-si, KR;
Ki-chul Kim, Suwon-si, KR;
Geum-jong Bae, Incheon Metropolitan, KR;
In-wook Cho, Yongin-si, KR;
Byoung-jin Lee, Seoul, KR;
Jin-hee Kim, Seongnam-si, KR;
Sang-su Kim, Suwon-si, KR;
Abstract
A non-volatile memory device having improved electrical characteristics and a method of fabricating the non-volatile memory device are provided. The non-volatile memory device includes a gate electrode, which is formed on a semiconductor substrate on which source and drain regions are formed, a trapping structure, which is interposed between the semiconductor substrate and the gate electrode and comprises an electron tunneling layer and a charge trapping layer, and an electron back-tunneling prevention layer, which is interposed between the gate electrode and the charge trapping layer, prevents electrons in the gate electrode from back-tunneling through the charge trapping layer, and is formed of a metal having a higher work function than the gate electrode.