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For the Inventor, By the Inventor

Rosegg, Austria

Gerhard Prechtl

USPTO Granted Patents = 60 

 

Average Co-Inventor Count = 2.6

ph-index = 5

Forward Citations = 113(Granted Patents)

DiyaCoin DiyaCoin = 0.32 


Inventors with similar research interests:


Location History:

  • St. Jakob im Rosental, AT (2010)
  • St. Jakob i. Rosenal, AT (2014)
  • Ross, AT (2014)
  • Rosental, AT (2015)
  • St. Jakob i. Rosenthal, AT (2015)
  • St. Jacob i. Rosental, AT (2013 - 2017)
  • Jakob i. Rosental, AT (2018)
  • St. Jakob i. Rosental, AT (2015 - 2019)
  • Villach, AT (2019)
  • Sankt Jakob im Rosental, AT (2020)
  • Rosegg, AT (2016 - 2024)

Company Filing History:

goldMedal56 out of 2,093 
 
Infineon Technologies Austria Ag
 patents
silverMedal4 out of 14,705 
 
Infineon Technologies Ag
 patents

Years Active: 2010-2025

where 'Filed Patents' based on already Granted Patents

60 patents (USPTO):
1. 12471305 - Water and ion barrier for III-V semiconductor devices (2025-11-11),
2. 12471301 - Integrated circuit and bipolar transistor (2025-11-11),
3. 12431886 - Electronic circuit with a transistor device and a clamp circuit and method (2025-09-30),
4. 12356653 - High electron mobility transistor with doped semiconductor region in gate structure (2025-07-08),
5. 12230700 - Type III-V semiconductor device with structured passivation (2025-02-18),
6. 12159918 - Group III nitride-based transistor device (2024-12-03),
7. 11929430 - High electron mobility transistor with doped semiconductor region in gate structure (2024-03-12),
8. 11862630 - Semiconductor device having a bidirectional switch and discharge circuit (2024-01-02),
9. 11721754 - Enhancement mode transistor device (2023-08-08),
10. 11417758 - Enhancement mode Group III nitride-based transistor device (2022-08-16),
11. 11349012 - Group III nitride-based transistor device and method of fabricating a gate structure for a group III nitride-based transistor device (2022-05-31),
12. 11257941 - High electron mobility transistor with doped semiconductor region in gate structure (2022-02-22),
13. 11114554 - High-electron-mobility transistor having a buried field plate (2021-09-07),
14. 10600710 - Semiconductor device (2020-03-24),
15. 10573568 - Method for producing an integrated heterojunction semiconductor device (2020-02-25),

Title: The Innovative Mind of Gerhard Prechtl

Introduction: Gerhard Prechtl, a distinguished inventor hailing from Rosegg, Austria, is renowned for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Gerhard Prechtl's latest patents showcase his forward-thinking approach and commitment to pushing the boundaries of technological advancement. His recent inventions have garnered attention for their ingenuity and practical applications in various industries.

Career Highlights: Throughout his illustrious career, Gerhard Prechtl has demonstrated a remarkable ability to transform innovative ideas into tangible solutions. His passion for invention has led to the development of numerous groundbreaking technologies that have had a significant impact on the world.

Collaborations: Gerhard Prechtl has collaborated with leading experts and organizations in the technology sector to bring his inventions to life. His collaborative efforts have resulted in the creation of cutting-edge products that have revolutionized the way we approach challenges in the modern world.

Conclusion: In conclusion, Gerhard Prechtl's dedication to innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor. His contributions to the field of technology continue to inspire and shape the future of innovation.

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