The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Jan. 24, 2023
Infineon Technologies Austria Ag, Villach, AT;
Gerhard Prechtl, Rosegg, AT;
Oliver Haeberlen, St. Magdalen, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes: a device formed in a III-V semiconductor body; metal layer(s) above the III-V semiconductor body; an interlayer dielectric adjacent each metal layer; vias electrically connecting each metal layer to the device formed in the III-V semiconductor body; a passivation layer touching and being supported by a top surface of the III-V semiconductor body, the lowermost interlayer dielectric touching and being supported by a top surface of the passivation layer, the passivation layer being an ineffective barrier against diffusion of water, water ions, sodium ions and potassium ions into the III-V semiconductor body; and a barrier interposed between a first oxide layer and a second oxide layer of the lowermost interlayer dielectric. The barrier is configured to prevent water, water ions, sodium ions and potassium ions from diffusing into the first oxide layer of the lowermost interlayer dielectric and which is immediately below the barrier.