The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Jul. 14, 2023
Infineon Technologies Austria Ag, Villach, AT;
Gerhard Prechtl, Rosegg, AT;
Oliver Häberlen, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
In an embodiment, a semiconductor device is provided that includes a Group III nitride transistor device and a Schottky barrier diode integrated in a Group III nitride body. A common drain/cathode finger is arranged on the Group III nitride body. Two or more source contacts are arranged on the Group III nitride body and spaced apart in a row, the row being spaced laterally apart from, and extending substantially parallel to, the common drain/cathode finger. A gate electrode structure and one or more Schottky metal contacts are arranged on the Group III nitride body. At least one Schottky metal contact is arranged between and spaced apart from neighbouring ones of the source contacts. The gate electrode structure includes a closed ring section for each source contact that laterally surrounds that source contact. Neighbouring closed ring sections are connected by a gate connection section.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile