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Los Gatos, CA, United States of America

Geraud Jean-Michel Dubois

This inventor holds 23 USPTO granted patents and 2 published patent applications, primarily in Nanoporous Materials. Top assignees: International Business Machines Corporation, Tokyo Electron Limited. Active years: 2008-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Geraud Jean-Michel Dubois. Retrieved from https://idiyas.com/inventor/geraud-jean-michel-dubois

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 23 

% Patents Active = 26.1

Average Co-Inventor Count = 5.4

ph-index = 5

Forward Citations = 82(Granted Patents)


Location History:

  • Los Gatos, CA (US) (2008 - 2013)
  • San Jose, CA (US) (2012 - 2015)
  • Los Altos, CA (US) (2014 - 2015)
  • Redwood City, CA (US) (2022)

Company Filing History:

goldMedal23 out of 166,425 
 
International Business Machines Corporation
 patents
silverMedal1 out of 10,933 
 
Tokyo Electron Limited
 patents
where one patent can have more than one assignee

Years Active: 2008-2022

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Areas of Expertise:
Nanoporous Media
Low Dielectric Materials
Imprint Lithography
Polyhedral Oligomeric Silsesquioxane
Pore Fill Integration
Hardmask Generation
Dielectric Layers
Thermal Management
Reliability Enhancement
Porous Films
Lamellar Structures
BEOL Applications
23 patents (USPTO):Explore Patents
1. 11371143 - Implementing the post-porosity plasma protection (P4) process using I-CVD (2022-06-28),
2. 9058983 - In-situ hardmask generation (2015-06-16),
3. 8927430 - Overburden removal for pore fill integration approach (2015-01-06),
4. 8871632 - Reduction of pore fill material dewetting (2014-10-28),
5. 8828489 - Homogeneous modification of porous films (2014-09-09),
6. 8648465 - Semiconductor interconnect structure having enhanced performance and reliability (2014-02-11),
7. 8623741 - Homogeneous porous low dielectric constant materials (2014-01-07),
8. 8617786 - Poly-oxycarbosilane compositions for use in imprint lithography (2013-12-31),
9. 8603584 - Polyhedral oligomeric silsesquioxane based imprint materials and imprint process using polyhedral oligomeric silsesquioxane based imprint materials (2013-12-10),
10. 8541301 - Reduction of pore fill material dewetting (2013-09-24),
11. 8492239 - Homogeneous porous low dielectric constant materials (2013-07-23),
12. 8389589 - Nanoporous media with lamellar structures (2013-03-05),
13. 8314005 - Homogeneous porous low dielectric constant materials (2012-11-20),
14. 8268903 - Nanoporous media templated from unsymmetrical amphiphilic porogens (2012-09-18),
15. 8026293 - Polyhedral oligomeric silsesquioxane based imprint materials and imprint process using polyhedral oligomeric silsesquioxane based imprint materials (2011-09-27),

Title: Inventor Geraud Jean-Michel Dubois

Introduction: Geraud Jean-Michel Dubois is a renowned inventor based in Los Gatos, CA (US) known for his groundbreaking contributions to various technological fields.

Latest Patents: Geraud Jean-Michel Dubois holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of innovative ideas.

Career Highlights: With a career spanning over two decades, Dubois has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized industries.

Collaborations: Throughout his career, Geraud Jean-Michel Dubois has collaborated with top engineers, scientists, and designers, fostering a culture of innovation and creativity in all his projects.

Conclusion: Geraud Jean-Michel Dubois continues to be a driving force in the world of inventions, inspiring the next generation of inventors with his visionary ideas and groundbreaking technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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