The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Sep. 04, 2012
Robert L. Bruce, White Plains, NY (US);
Geraud Jean-michel Dubois, San Jose, CA (US);
Theo J. Frot, Los Gatos, CA (US);
Teddie P. Magbitang, San Jose, CA (US);
Sampath Purushothaman, Yorktown Heights, NY (US);
David L. Rath, Stormville, NY (US);
Willi Volksen, San Jose, CA (US);
Robert L. Bruce, White Plains, NY (US);
Geraud Jean-Michel Dubois, San Jose, CA (US);
Theo J. Frot, Los Gatos, CA (US);
Teddie P. Magbitang, San Jose, CA (US);
Sampath Purushothaman, Yorktown Heights, NY (US);
David L. Rath, Stormville, NY (US);
Willi Volksen, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one first process on the structure; after performing the at least one first process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material; and after removing the filling material from the plurality of pores, performing at least one second process on the structure, where the at least one second process is performed at a third temperature that is greater than the second temperature.