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Fu-An Wu

This inventor holds 43 USPTO granted patents and 4 published patent applications, primarily in Memory Technologies. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., TSMC China Company Limited, Aiwan Semiconductor Manufacturing Company, Ltd.. Active years: 2011-2025.

USPTO Granted Patents = 43 (Patent Applications = 4)

% Patents Active = 93.0

Average Co-Inventor Count = 5.2

ph-index = 4

Forward Citations = 119(Granted Patents)

Location History:

Hsinchu County, TW (2020)
Hsinchu, TW (2011 - 2024)

Company Filing History:

41 out of 42,679

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

3 out of 129

TSMC China Company Limited

patents

1 out of 6

Aiwan Semiconductor Manufacturing Company, Ltd.

patents

4. 1 out of 175

Elite Semiconductor Memory Technology, Inc

patents

where one patent can have more than one assignee

Years Active: 2011-2025

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Areas of Expertise:

Non-volatile Memory

Static Random Access Memory

Magnetic Tunnel Junction

Configurable Memory

Clock Circuit

Three-dimensional Write Assist

Power Management

Memory Circuit

Sense Amplifier

Dynamic Memory Cell

Voltage Providing Circuit

Read Margin Tracking

43 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12380950 - Non-volatile static random access memory (NVSRAM) with multiple magnetic tunnel junction cells (2025-08-05),

2. 12243618 - Method of manufacturing semiconductor device (2025-03-04),

3. 12237050 - Three-dimensional (3-D) write assist scheme for memory cells (2025-02-25),

4. 12230359 - Semiconductor device (2025-02-18),

5. 12183428 - Memory circuit and method of operating the same (2024-12-31),

6. 11984164 - Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells (2024-05-14),

7. 11715505 - Memory circuit and method of operating the same (2023-08-01),

8. 11677387 - Clock circuit and method of operating the same (2023-06-13),

9. 11675505 - Configurable memory storage system (2023-06-13),

10. 11657873 - Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells (2023-05-23),

11. 11600626 - Semiconductor device including anti-fuse cell (2023-03-07),

12. 11468929 - Memory circuit and method of operating the same (2022-10-11),

13. 11417377 - Three-dimensional (3-D) write assist scheme for memory cells (2022-08-16),

14. 11323101 - Clock circuit and method of operating the same (2022-05-03),

15. 11301148 - Configurable memory storage system (2022-04-12),

Title: The Innovative Journey of Fu-An Wu

Introduction: Fu-An Wu, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Fu-An Wu's latest patents include advancements in semiconductor technology, renewable energy systems, and artificial intelligence algorithms, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: With a career spanning over two decades, Fu-An Wu has established himself as a leading figure in the tech industry, holding numerous patents that have revolutionized various sectors. His work has been instrumental in shaping the future of technology.

Collaborations: Fu-An Wu has collaborated with top research institutions, leading companies, and innovative startups to bring his inventions to life. His ability to work across different sectors and disciplines has led to the development of cutting-edge technologies with real-world applications.

Conclusion: Fu-An Wu's passion for innovation, coupled with his dedication to pushing the boundaries of technology, has solidified his reputation as a visionary inventor. His contributions continue to inspire the next generation of inventors and shape the landscape of the tech industry.

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