The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Jul. 29, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsmc China Company, Limited, Songjiang, CN;
Yi-Tzu Chen, Hsinchu, TW;
Ching-Wei Wu, Hsinchu, TW;
Hau-Tai Shieh, Hsinchu, TW;
Hung-Jen Liao, Hsinchu, TW;
Fu-An Wu, Hsinchu, TW;
He-Zhou Wan, Hsinchu, TW;
XiuLi Yang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
TSMC CHINA COMPANY, LIMITED, Shanghai, CN;
Abstract
A memory circuit includes a NAND logic gate configured to receive a first bit line signal and a second bit line signal, and to generate a first signal. The memory circuit further includes a first N-type transistor coupled to the NAND logic gate, and configured to receive a first pre-charge signal. The memory circuit further includes a second N-type transistor coupled to the first N-type transistor and a reference voltage supply, and configured to receive a first clock signal. The memory circuit further includes a first latch coupled to the NAND logic gate, and configured to latch the first signal in response to at least the first clock signal or the first pre-charge signal.