This inventor holds 42 USPTO granted patents and 6 published patent applications, primarily in Memory Device Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., TSMC China Company Limited, TSMC Nanjing Company, Limited. Active years: 2013-2026.
Location History:
- Hsinchu, TW (2022 - 2023)
- Shanghai, CN (2013 - 2024)
Company Filing History:
41 out of 42,679Â 
35 out of 129Â 
18 out of 110Â Years Active: 2013-2026
Areas of Expertise:
Title: He-Zhou Wan: Innovator in Memory Device Technology
Introduction
He-Zhou Wan, based in Shanghai, China, is a prominent inventor known for his significant contributions to the fields of memory device technology. With an impressive portfolio of 37 patents, his innovations have impacted how memory devices operate and perform in various applications.
Latest Patents
Among his latest patents, two noteworthy inventions stand out. The first is a "Signal generator for controlling timing of signal in memory device." This device includes a first memory subarray, a first modulation circuit, a second memory subarray, a second modulation circuit, and a control signal generator. The intricate design ensures precise timing control based on the lengths of the respective memory subarrays.
The second patent he developed is a "Timing control circuit of memory device with tracking word line and tracking bit line." This circuit features a memory array, a tracking bit line, and a timing control circuit that incorporates a Schmitt trigger. This innovative approach generates a negative bit line enable signal for managing voltage levels across multiple bit lines in the memory array.
Career Highlights
He-Zhou Wan has made remarkable strides in his career, having worked with leading companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and TSMC China Company Limited. His expertise in memory device technologies and his commitment to innovation have established him as a valuable asset in these organizations.
Collaborations
Throughout his career, He-Zhou Wan has collaborated with esteemed professionals such as Xiu-Li Yang and Ching-Wei Wu. Their collective efforts on various projects have contributed to the advancement of technologies in memory devices, showcasing the synergy between talented inventors in the industry.
Conclusion
He-Zhou Wan's innovative work in the field of memory device technology, evidenced by his numerous patents, showcases his significant role as an inventor. As technology continues to evolve, his contributions will likely remain influential, paving the way for future advancements in memory devices and related technologies.