Hsinchu, Taiwan

Hau-Tai Shieh

This inventor holds 80 USPTO granted patents and 18 published patent applications, primarily in Memory Devices (CPC class G11C). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., TSMC China Company Limited. Active years: 2006-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hau-Tai Shieh. Retrieved from https://idiyas.com/inventor/hau-tai-shieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 80 

% Patents Active = 86.3

Average Co-Inventor Count = 3.5

ph-index = 4

Forward Citations = 76(Granted Patents)

Forward Citations (Not Self Cited) = 57(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:


Years Active: 2006-2026

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Areas of Expertise:
Sense Amplifier
Memory Device
Power Consumption
Latch Circuit
Integrated Circuit
FinFET
Bit Line Pre-charge
Sub-word Line Driver
Word Line Control
Three-dimensional Memory
Operation Assist Circuit
80 patents (USPTO):Explore Patents

Title: Inventor Hau-Tai Shieh

Introduction: Hau-Tai Shieh is a renowned inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hau-Tai Shieh holds several patents in the areas of semiconductor technology, renewable energy, and advanced manufacturing processes, showcasing his diverse expertise and inventive spirit.

Career Highlights: With a career spanning over two decades, Shieh has worked with leading research institutions and technology companies, playing a pivotal role in developing cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Hau-Tai Shieh has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge exchange that has led to significant advancements in technology.

Conclusion: Hau-Tai Shieh's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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