The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Dec. 21, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chien-Yuan Chen, Hsinchu City, TW;
Hau-Tai Shieh, Hsinchu City, TW;
Cheng Hung Lee, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 7/04 (2006.01); G11C 7/14 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1048 (2013.01); G11C 7/04 (2013.01); G11C 7/14 (2013.01);
Abstract
A memory device includes a memory cell and an amplifier. The memory cell is configured to store a first data bit. The amplifier is configured to generate a first data signal at a first node according to the first data bit, and configured to charge the first node according to a precharge signal. After the first node is charged according to the precharge signal, the amplifier is further configured to discharge the first node according to the precharge signal.