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For the Inventor, By the Inventor

Fremont, CA, United States of America

Feng Zhou

USPTO Granted Patents = 54 

 

Average Co-Inventor Count = 3.7

ph-index = 6

Forward Citations = 147(Granted Patents)

Forward Citations (Not Self Cited) = 98(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Los Alamos, NM (US) (2007)
  • Austin, TX (US) (2014 - 2016)
  • Shanghai, CN (2009 - 2021)
  • Guangzhou, CN (2022)
  • Guangdong, CN (2010 - 2023)
  • Fremont, CA (US) (2015 - 2023)
  • Chang'an Dongguan, CN (2023)

Company Filing History:

goldMedal27 out of 622 
 
Silicon Storage Technology, Inc.
 patents
silverMedal9 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
bronzeMedal2 out of 15,462 
 
University of California
 patents
4. 2 out of 3 
 
Shanghai Xunhe Pharmaceutical Technology Co. Ltd.
 patents
5. 2 out of 1,567 
 
Vivo Mobile Communication Co., Ltd.
 patents
6. 2 out of 385 
 
South China University of Technology
 patents
7. 2 out of 27,156 
 
Huawei Technologies Co., Limited
 patents
8. 1 out of 574 
 
Los Alamos National Security, LLC
 patents
9. 1 out of 12 
 
Commercial Aircraft Corporation of China, Ltd.
 patents
10. 1 out of 8 
 
Commercial Aircraft Corporation of China, Ltd. Shanghai Aircraft Design and Research Institute
 patents
11. 1 out of 496 
 
Huazhong University of Science and Technology
 patents
12. 1 out of 1,475 
 
Agency for Science, Technology and Research
 patents
13. 1 out of 3,046 
 
Future Wei Technologies, Inc.
 patents
14. 1 out of 4 
 
Shanghai Academy of Agricultural Sciences
 patents
15. 1 out of 1,724 
 
Semiconductor Manufacturing International (shanghai) Corporation
 patents
16. 1 out of 934 
 
Semiconductor Manufacturing International (beijing) Corporation
 patents
17. 1 out of 5,252 
 
Hewlett Packard Enterprise Development LP
 patents
18. 1 out of 1 
 
Dongguan Nabaichuan Electronic Technological Co., Ltd.
 patent
19. 1 out of 4,047 
 
Hong-fu Jin Precision Industry (shenzhen) Co., Ltd.
 patents
20. 1 out of 19,767 
 
Hon Hai Precision Industry Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2007-2025

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Areas of Expertise:
Non-Volatile Memory
FinFET Technology
Resistive Random Access Memory
Split Gate Memory Cells
High K Metal Gate
Memory Array Architecture
Genetic Transformation
Wear-Resistant Steel
Circuit Design
Embedded Memory Devices
Three-Dimensional FinFET
LED Lamp Technology
54 patents (USPTO):Explore Patents
1. 12453136 - Method of forming a device with planar split gate non-volatile memory cells, planar HV devices, and FinFET logic devices on a substrate (2025-10-21),
2. 11652162 - Method of forming a three-gate non-volatile flash memory cell using two polysilicon deposition steps (2023-05-16),
3. 11649516 - Method for manufacturing thin-specification high-Ti wear-resistant steel NM450 (2023-05-16),
4. 11646078 - Set-while-verify circuit and reset-while verify circuit for resistive random access memory cells (2023-05-09),
5. 11604567 - Information processing method and terminal (2023-03-14),
6. 11594453 - Method of forming a device with split gate non-volatile memory cells, HV devices having planar channel regions and FINFET logic devices (2023-02-28),
7. 11453932 - Thin gauge wear-resistant steel sheet and method of manufacturing the same (2022-09-27),
8. 11448387 - Light module and mobile terminal (2022-09-20),
9. 11362100 - FinFET split gate non-volatile memory cells with enhanced floating gate to floating gate capacitive coupling (2022-06-14),
10. 11183506 - Method of making embedded memory device with silicon-on-insulator substrate (2021-11-23),
11. 11114451 - Method of forming a device with FinFET split gate non-volatile memory cells and FinFET logic devices (2021-09-07),
12. 11051267 - Channel latency determining method, positioning method, and related device (2021-06-29),
13. 10937794 - Split gate non-volatile memory cells with FinFET structure and HKMG memory and logic gates, and method of making same (2021-03-02),
14. 10935671 - Positioning method, assistant site, and system (2021-03-02),
15. 10889824 - Method for genetic transformation of edible mushrooms (2021-01-12),

As an AI assistant specializing in innovations, inventions, inventors, patent attorneys, assignees, and patents, I'd be delighted to assist you in constructing an article about inventor Feng Zhou.

Title: The Innovative Journey of Feng Zhou: Pioneering Patents and Technical Excellence.

Introduction: Feng Zhou, a brilliant inventor based in Fremont, CA (US), has left an indelible mark in the field of technology with his prolific contributions and groundbreaking patents.

Latest Patents: Among his 53 patents, two of his latest inventions stand out - "Method of forming a three-gate non-volatile flash memory cell using two polysilicon deposition steps" and "Method for manufacturing thin-specification high-Ti wear-resistant steel NM450."

Career Highlights: Feng Zhou has proven his expertise in notable companies such as Silicon Storage Technology, Inc. and Freescale Semiconductor, Inc., where he honed his skills and brought his revolutionary ideas to fruition.

Collaborations: Throughout his career, Feng Zhou has worked alongside talented individuals like Nhan Do and Xian Liu, fostering a collaborative spirit that has led to successful innovations and breakthroughs.

Conclusion: Feng Zhou's dedication to innovation, coupled with his remarkable patents and collaborative endeavors, underscores his status as a pioneering inventor in the realm of technology.

If you need further details or any additional assistance, feel free to let me know!

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