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For the Inventor, By the Inventor

Fremont, CA, United States of America

Feng Zhou

This inventor holds 54 USPTO granted patents and 15 published patent applications and 15 EPO patents, primarily in Non-Volatile Memory (CPC class H01L). Top assignees: Silicon Storage Technology, Inc., Freescale Semiconductor,inc., Huawei Technologies Co., Limited. Active years: 2007-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Feng Zhou. Retrieved from https://idiyas.com/inventor/feng-zhou-bs24nxh3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 54 

% Patents Active = 92.6

 

Average Co-Inventor Count = 3.7

ph-index = 6

Forward Citations = 147(Granted Patents)

Forward Citations (Not Self Cited) = 98(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Los Alamos, NM (US) (2007)
  • Austin, TX (US) (2014 - 2016)
  • Shanghai, CN (2009 - 2021)
  • Guangzhou, CN (2022)
  • Guangdong, CN (2010 - 2023)
  • Fremont, CA (US) (2015 - 2023)
  • Chang'an Dongguan, CN (2023)

Company Filing History:

goldMedal27 out of 655 
 
Silicon Storage Technology, Inc.
 patents
silverMedal9 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
bronzeMedal2 out of 27,557 
 
Huawei Technologies Co., Limited
 patents
4. 2 out of 3 
 
Shanghai Xunhe Pharmaceutical Technology Co. Ltd.
 patents
5. 2 out of 410 
 
The South China University of Technology
 patents
6. 2 out of 16,035 
 
University of California
 patents
7. 2 out of 1,645 
 
Vivo Mobile Communication Co., Ltd.
 patents
8. 1 out of 1,562 
 
Agency for Science, Technology and Research
 patents
9. 1 out of 13 
 
Commercial Aircraft Corporation of China, Ltd.
 patents
10. 1 out of 8 
 
Commercial Aircraft Corporation of China, Ltd. Shanghai Aircraft Design and Research Institute
 patents
11. 1 out of 1 
 
Dongguan Nabaichuan Electronic Technological Co., Ltd.
 patent
12. 1 out of 3,059 
 
Future Wei Technologies, Inc.
 patents
13. 1 out of 5,693 
 
Hewlett Packard Enterprise Development LP
 patents
14. 1 out of 19,792 
 
Hon Hai Precision Industry Co., Ltd.
 patents
15. 1 out of 4,047 
 
Hong-Fu Jin Precision Industry (Shenzhen) Co., Ltd.
 patents
16. 1 out of 531 
 
Huazhong University of Science and Technology
 patents
17. 1 out of 576 
 
Los Alamos National Security, LLC
 patents
18. 1 out of 950 
 
Semiconductor Manufacturing International (Beijing) Corporation
 patents
19. 1 out of 1,755 
 
Semiconductor Manufacturing International (Shanghai) Corporation
 patents
20. 1 out of 5 
 
Shanghai Academy of Agricultural Sciences
 patents
where one patent can have more than one assignee

Years Active: 2007-2025

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Areas of Expertise:
Non-Volatile Memory
FinFET
Resistive RAM
Split Gate
Flash Memory
Logic Devices
High K Metal Gate
Memory Cell Array
Silicon-On-Insulator
Three-Dimensional Structure
Memory Manufacturing
Device Fabrication
54 patents (USPTO):Explore Patents
1. 12453136 - Method of forming a device with planar split gate non-volatile memory cells, planar HV devices, and FinFET logic devices on a substrate (2025-10-21),
2. 11652162 - Method of forming a three-gate non-volatile flash memory cell using two polysilicon deposition steps (2023-05-16),
3. 11649516 - Method for manufacturing thin-specification high-Ti wear-resistant steel NM450 (2023-05-16),
4. 11646078 - Set-while-verify circuit and reset-while verify circuit for resistive random access memory cells (2023-05-09),
5. 11604567 - Information processing method and terminal (2023-03-14),
6. 11594453 - Method of forming a device with split gate non-volatile memory cells, HV devices having planar channel regions and FINFET logic devices (2023-02-28),
7. 11453932 - Thin gauge wear-resistant steel sheet and method of manufacturing the same (2022-09-27),
8. 11448387 - Light module and mobile terminal (2022-09-20),
9. 11362100 - FinFET split gate non-volatile memory cells with enhanced floating gate to floating gate capacitive coupling (2022-06-14),
10. 11183506 - Method of making embedded memory device with silicon-on-insulator substrate (2021-11-23),
11. 11114451 - Method of forming a device with FinFET split gate non-volatile memory cells and FinFET logic devices (2021-09-07),
12. 11051267 - Channel latency determining method, positioning method, and related device (2021-06-29),
13. 10937794 - Split gate non-volatile memory cells with FinFET structure and HKMG memory and logic gates, and method of making same (2021-03-02),
14. 10935671 - Positioning method, assistant site, and system (2021-03-02),
15. 10889824 - Method for genetic transformation of edible mushrooms (2021-01-12),

As an AI assistant specializing in innovations, inventions, inventors, patent attorneys, assignees, and patents, I'd be delighted to assist you in constructing an article about inventor Feng Zhou.

Title: The Innovative Journey of Feng Zhou: Pioneering Patents and Technical Excellence.

Introduction: Feng Zhou, a brilliant inventor based in Fremont, CA (US), has left an indelible mark in the field of technology with his prolific contributions and groundbreaking patents.

Latest Patents: Among his 53 patents, two of his latest inventions stand out - "Method of forming a three-gate non-volatile flash memory cell using two polysilicon deposition steps" and "Method for manufacturing thin-specification high-Ti wear-resistant steel NM450."

Career Highlights: Feng Zhou has proven his expertise in notable companies such as Silicon Storage Technology, Inc. and Freescale Semiconductor, Inc., where he honed his skills and brought his revolutionary ideas to fruition.

Collaborations: Throughout his career, Feng Zhou has worked alongside talented individuals like Nhan Do and Xian Liu, fostering a collaborative spirit that has led to successful innovations and breakthroughs.

Conclusion: Feng Zhou's dedication to innovation, coupled with his remarkable patents and collaborative endeavors, underscores his status as a pioneering inventor in the realm of technology.

If you need further details or any additional assistance, feel free to let me know!

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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