Fang-Ting Kuo is a prominent inventor based in Zhubei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 17 patents. His work focuses on improving the efficiency and effectiveness of semiconductor structures.

Latest Patents

Among his latest patents is a groundbreaking invention titled "Partial metal grain size control to improve CMP loading effect." This patent describes a semiconductor structure that includes a substrate with distinct active regions, gate structures, and dopants in the gate electrodes. Another notable patent is for a "Barrier layer for metal insulator metal capacitors," which outlines a method for fabricating MiM capacitor structures with nitrogen-rich metal nitride layers. This method involves the careful deposition of electrode bilayers and dielectric layers to enhance capacitor performance.

Career Highlights

Fang-Ting Kuo is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leader in the semiconductor industry. His innovative work has positioned him as a key figure in advancing semiconductor technologies.

Collaborations

Fang-Ting has collaborated with notable colleagues, including Anhao Cheng and Victor Chiang Liang. Their combined expertise has contributed to the successful development of various semiconductor technologies.

Conclusion

Fang-Ting Kuo's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to pave the way for advancements in semiconductor structures and applications.

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