The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2020

Filed:

Apr. 16, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Victor Chiang Liang, Hsinchu, TW;

Fu-Huan Tsai, Kaohsiung, TW;

Fang-Ting Kuo, Zhubei, TW;

Meng-Chang Ho, Hsinchu, TW;

Yu-Lin Wei, Taichung, TW;

Chi-Feng Huang, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 27/146 (2006.01); H01L 29/66 (2006.01); H01L 27/07 (2006.01); H01L 29/93 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14603 (2013.01); H01L 27/0733 (2013.01); H01L 27/1463 (2013.01); H01L 27/14614 (2013.01); H01L 27/14689 (2013.01); H01L 29/66174 (2013.01); H01L 29/93 (2013.01);
Abstract

A semiconductor device includes a substrate, wherein the substrate includes a channel region. The semiconductor device further includes an isolation feature in the substrate. The isolation feature includes a first portion in the substrate, and a second portion extending along a top surface of the substrate. The second portion partially covers the channel region. The semiconductor device further includes a gate structure over the substrate, wherein the gate structure partially covers the second portion of the isolation feature.


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