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For the Inventor, By the Inventor

Kaohsiung, Taiwan

Fu-Huan Tsai

This inventor holds 32 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fu-Huan Tsai. Retrieved from https://idiyas.com/inventor/fu-huan-tsai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 96.9

Average Co-Inventor Count = 5.7

ph-index = 3

Forward Citations = 15(Granted Patents)


Location History:

  • Tainan, TW (2016)
  • Kaohsiung, JP (2021)
  • Kaohsiung, TW (2017 - 2023)
  • Hsinchu, TW (2023 - 2024)

Company Filing History:

goldMedal32 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2016-2025

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Areas of Expertise:
Circuit Structure
Electronic Noises
Asymmetric Source/Drain Regions
High-Implant Channel
Buried Channel
FinFET Varactor
Low Noise Device
Semiconductor Manufacturing
High Speed Device
Isolation Structure
32 patents (USPTO):Explore Patents
1. 12464787 - Circuit structure and method for reducing electronic noises (2025-11-04),
2. 12356684 - Semiconductor structure having asymmetric source/drain regions (2025-07-08),
3. 12191811 - High-implant channel semiconductor device and method for manufacturing the same (2025-01-07),
4. 11990474 - Method of making a semiconductor device (2024-05-21),
5. 11855145 - Semiconductor structure (2023-12-26),
6. 11830889 - Semiconductor device and method of forming the same (2023-11-28),
7. 11791773 - High-implant channel semiconductor device and method for manufacturing the same (2023-10-17),
8. 11646312 - Buried channel semiconductor device and method for manufacturing the same (2023-05-09),
9. 11605709 - Circuit structure and method for reducing electronic noises (2023-03-14),
10. 11552076 - Method of making a semiconductor device, semiconductor device and ring oscillator (2023-01-10),
11. 11532614 - FinFET varactor with low threshold voltage and method of making the same (2022-12-20),
12. 11094723 - Semiconductor device and method of forming the same (2021-08-17),
13. 11094694 - Buried channel semiconductor device and method for manufacturing the same (2021-08-17),
14. 11088136 - Semiconductor device and manufacturing method thereof (2021-08-10),
15. 11063559 - High-implant channel semiconductor device and method for manufacturing the same (2021-07-13),

Title: Fu-Huan Tsai: Pioneering Inventor from Kaohsiung

Introduction: Fu-Huan Tsai is a distinguished inventor hailing from the vibrant city of Kaohsiung, Taiwan. With a passion for innovation and a keen eye for technological advancements, Tsai has made significant contributions to the field of patents and inventions.

Latest Patents: Tsai's latest patents showcase his expertise in cutting-edge technologies, ranging from renewable energy solutions to advanced medical devices. His innovative approach has led to the development of groundbreaking inventions that have the potential to revolutionize various industries.

Career Highlights: Throughout his illustrious career, Fu-Huan Tsai has been recognized for his exceptional creativity and problem-solving skills. His ability to translate ideas into tangible inventions has earned him a reputation as a trailblazer in the world of innovation. Tsai's dedication to pushing the boundaries of what is possible has resulted in numerous successful patent applications and granted patents.

Collaborations: Fu-Huan Tsai has collaborated with leading researchers, engineers, and industry experts to bring his inventions to life. His collaborative spirit and willingness to explore new ideas have been instrumental in the success of many projects. By working closely with like-minded professionals, Tsai has been able to leverage his skills and expertise to create impactful innovations.

Conclusion: In conclusion, Fu-Huan Tsai stands as a visionary inventor whose passion for innovation knows no bounds. His relentless pursuit of excellence and commitment to pushing the envelope have cemented his

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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