The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Nov. 14, 2023
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Hsing-I Tsai, Hsinchu, TW;
Fu-Huan Tsai, Kaohsiung, TW;
Chia-Chung Chen, Keelung, TW;
Hsiao-Chun Lee, Chiayi, TW;
Chi-Feng Huang, Hsinchu County, TW;
Cho-Ying Lu, Hsinchu, TW;
Victor Chiang Liang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a first gate structure, a second gate structure coupled to the first gate structure, a source region, a first drain region, and a second drain region. The source region is surrounded by the first gate structure and the second gate structure. The first drain region is separated from the source region by the first gate structure. The second drain region is separated from the source region by the second gat structure. A shape of the first drain region and a shape of the second drain region are different from each other from a plan view.