The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Aug. 31, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Hsing-I Tsai, Hsinchu, TW;
Fu-Huan Tsai, Kaohsiung, TW;
Chia-Chung Chen, Keelung, TW;
Hsiao-Chun Lee, Chiayi, TW;
Chi-Feng Huang, Hsinchu County, TW;
Cho-Ying Lu, Hsinchu, TW;
Victor Chiang Liang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a gate structure, a source region, a drain region, and an isolation structure. The gate structure includes a first portion, a second portion and a third portion. The first portion extends in a first direction, and the second portion and the third portion extend in a second direction. The second portion and the third portion are disposed at opposite ends of the first portion. The source region and the drain region are separated by the gate structure. The isolation structure surrounds the gate structure, the source region and the drain region. The first portion has a first sidewall, the second portion has a second sidewall, and the third portion has a third sidewall. The first sidewall, the second sidewall and the third sidewall are parallel to the first direction and aligned with each other to form a straight line.