The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Jul. 23, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Victor Chiang Liang, Hsinchu, TW;

Fu-Huan Tsai, Hsinchu, TW;

Chi-Feng Huang, Hsinchu, TW;

Yu-Lin Wei, Hsinchu, TW;

Fang-Ting Kuo, Hsinchu, TW;

Meng-Chang Ho, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 29/66 (2006.01); H01L 27/07 (2006.01); H01L 29/93 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14603 (2013.01); H01L 27/0733 (2013.01); H01L 27/1463 (2013.01); H01L 27/14614 (2013.01); H01L 27/14689 (2013.01); H01L 29/66174 (2013.01); H01L 29/93 (2013.01);
Abstract

A low noise device includes an isolation feature in a substrate. The low noise device further includes a gate stack over a channel in the substrate, wherein the isolation feature is adjacent to the channel. The low noise device further includes a spacer surrounding a portion of the gate stack, wherein an edge of the gate stack is spaced from an edge of the isolation feature adjacent to the spacer by a distance ranging from a minimum spacing distance to about 0.3 microns (μm).


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