The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
May. 25, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Fang-Ting Kuo, Zhubei, TW;
Ren-Wei Xiao, Shetou Township, TW;
Sheng Yu Lin, Taoyuan, TW;
Chia-Wei Liu, Zhubei, TW;
Chun Hua Chang, Zhubei, TW;
Chien-Ying Wu, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of making a metal insulator metal (MIM) capacitor includes forming a copper bulk layer in a base layer, wherein the copper bulk layer includes a hillock extending from a top surface thereof. The method further includes depositing an etch stop layer over the base layer and the copper bulk layer. The method further includes depositing an oxide-based dielectric layer over the etch stop layer. The method further includes forming a capacitor over the oxide-based dielectric layer. The method further includes forming a contact extending through the oxide-based dielectric layer and the etch stop layer to contact the copper bulk layer, wherein the forming of the contact removes the hillock.