The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Aug. 27, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Anhao Cheng, Hsinchu, TW;

Fang-Ting Kuo, Hsinchu, TW;

Yen-Yu Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/495 (2013.01); H01L 21/28176 (2013.01); H01L 21/82345 (2013.01); H01L 21/823456 (2013.01); H01L 21/823462 (2013.01); H01L 29/401 (2013.01); H01L 29/4236 (2013.01); H01L 29/42364 (2013.01); H01L 29/4238 (2013.01); H01L 29/518 (2013.01); H01L 29/66545 (2013.01); H01L 27/088 (2013.01); H01L 29/4975 (2013.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes a substrate containing a first active region in a first region of the substrate and a second active region in a second region of the substrate, a plurality of first gate structures over the first active region each including a first gate stack having a first high-k gate dielectric and a first gate electrode and first gate spacers surrounding the first gate stack, and a plurality of second gate structures over the second active region each including a second gate stack having a second high-k gate dielectric and a second gate electrode and second gate spacers surrounding the second gate stack. At least a portion of the second gate electrode comprises dopants.


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