The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Jan. 05, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chieh-Ning Yang, Tainan, TW;

Nai-Hsin Ting, Tainan, TW;

Fang-Ting Kuo, Hsinchu, TW;

Ping-Pang Hsieh, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/80 (2025.01); H10D 1/47 (2025.01); H10D 30/01 (2025.01); H10D 30/60 (2025.01);
U.S. Cl.
CPC ...
H10D 84/811 (2025.01); H10D 1/474 (2025.01); H10D 30/023 (2025.01); H10D 30/611 (2025.01);
Abstract

A semiconductor device structure and methods of forming the same are described. The structure includes a first gate structure disposed over a substrate in an active device region, an insulating material disposed over the substrate in a passive device region, a resistor structure disposed over the insulating material in the passive device region, a first conductive contact electrically connected to the resistor structure, a second conductive contact disposed over the resistor structure, and a dielectric layer in contact with the second conductive contact and the resistor structure.


Find Patent Forward Citations

Quick Actions:

Yang, Chieh-Ning. (2026). Semiconductor device structure and methods of forming the same (U.S. Patent No. 12772546). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772546

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