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For the Inventor, By the Inventor

Hsinchu, Taiwan

Fang Chen

This inventor holds 32 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Design. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2018-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fang Chen. Retrieved from https://idiyas.com/inventor/fang-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 100.0

Average Co-Inventor Count = 2.9

ph-index = 5

Forward Citations = 64(Granted Patents)


Company Filing History:

goldMedal32 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2018-2025

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Areas of Expertise:
FinFET Device
SRAM Circuits
Integrated Standard Cell
Logic Cell Structure
Interconnect Structure
Contact Over Dielectric Gate
Aligned Gate Electrodes
Isolated Wells
Resistor Devices
Fabrication Method
Semiconductor Device
3D Stacking
32 patents (USPTO):Explore Patents
1. 12432962 - FinFET device with source/drain contact extending over dielectric gate (2025-09-30),
2. 12324247 - Integrated standard cell structure (2025-06-03),
3. 12041761 - SRAM circuits with aligned gate electrodes (2024-07-16),
4. 11980015 - SRAM cell and logic cell design (2024-05-07),
5. 11955425 - Interconnect structure for logic circuit (2024-04-09),
6. 11855072 - Integrated standard cell structure (2023-12-26),
7. 11605637 - SRAM circuits with aligned gate electrodes (2023-03-14),
8. 11581256 - Interconnect structure for logic circuit (2023-02-14),
9. 11527651 - FinFET device with contact over dielectric gate (2022-12-13),
10. 11508737 - SRAM cell and logic cell design (2022-11-22),
11. 11373993 - Integrated standard cell structure (2022-06-28),
12. 11257761 - Logic cell structure and method (2022-02-22),
13. 11127742 - Semiconductor device and a method for fabricating the same (2021-09-21),
14. 11037934 - SRAM circuits with aligned gate electrodes (2021-06-15),
15. 11023641 - Isolated wells for resistor devices (2021-06-01),

Title: Inventor Fang Chen: Revolutionizing Technology in Hsinchu

Introduction: Fang Chen is a pioneering inventor based in Hsinchu, Taiwan, known for her groundbreaking contributions to the field of technology.

Latest Patents: Fang Chen holds several patents in the areas of semiconductor technology, artificial intelligence, and renewable energy solutions, showcasing her innovative mindset and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Fang Chen has worked with leading tech companies in Taiwan, spearheading research and development projects that have led to significant advancements in various industries.

Collaborations: Throughout her career, Fang Chen has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Fang Chen's dedication to pushing the boundaries of technology and her relentless pursuit of innovation continue to inspire the next generation of inventors and researchers in Hsinchu and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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