The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

Nov. 13, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Fang Chen, Hsinchu, TW;

Jhon Jhy Liaw, Hsinchu County, TW;

Min-Chang Liang, Hsin-Chu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 27/11 (2006.01); H01L 21/8238 (2006.01); H01L 23/522 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 27/1157 (2017.01); H01L 29/06 (2006.01); H03K 19/20 (2006.01); H01L 27/118 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76849 (2013.01); H01L 21/823828 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 27/11 (2013.01); H01L 27/1157 (2013.01); H01L 29/0649 (2013.01); H03K 19/20 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/66545 (2013.01); H01L 2027/11875 (2013.01);
Abstract

The semiconductor structure includes a plurality of FETs disposed on a semiconductor substrate, the FETs including gates with elongated shape oriented in a first direction; a first metal layer of first metal lines disposed over the gates and oriented in a second direction perpendicular to the first direction; a second metal layer of second metal lines disposed over the first metal layer and oriented in the first direction; and a third metal layer of third metal lines oriented in the second direction and disposed over the second metal layer. The first metal lines have a first pitch P; the second metal lines have a second pitch P; the third metal lines have a third pitch P; and the gates have a fourth pitch P, wherein a ratio of the second pitch over the fourth pitch P:Pis about 3:2.


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