The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2023

Filed:

Jun. 11, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Fang Chen, Hsinchu, TW;

Jhon Jhy Liaw, Zhudong Township, TW;

Min-Chang Liang, Zhu-Dong Town, TW;

Ren-Fen Tsui, Taipei, TW;

Shih-Chi Fu, Zhudong Township, TW;

Yen-Huei Chen, Jhudong Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); G11C 11/418 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); G11C 11/418 (2013.01); H01L 23/528 (2013.01); H01L 27/0207 (2013.01); H01L 27/1116 (2013.01);
Abstract

A device includes a Static Random Access Memory (SRAM) array, and an SRAM cell edge region abutting the SRAM array. The SRAM array and the SRAM cell edge region in combination include first gate electrodes having a uniform pitch. A word line driver abuts the SRAM cell edge region. The word line driver includes second gate electrodes, and the first gate electrodes have lengthwise directions aligned to lengthwise directions of respective ones of the second gate electrodes.


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