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For the Inventor, By the Inventor

Singapore, Singapore

Eng Hua Lim

This inventor holds 21 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: Chartered Semiconductor Manufacturing Ltd (Corporation), International Business Machines Corporation, Globalfoundries Singapore Pte. Ltd.. Active years: 1999-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eng Hua Lim. Retrieved from https://idiyas.com/inventor/eng-hua-lim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 21

% Patents Active = 66.7

Average Co-Inventor Count = 5.0

ph-index = 10

Forward Citations = 377(Granted Patents)


Location History:

  • S'pore, SG (2003)
  • Singapore, SG (1999 - 2012)

Company Filing History:

goldMedal19 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (Corporation)
 patents
silverMedal3 out of 166,524 
 
International Business Machines Corporation
 patents
bronzeMedal1 out of 1,065 
 
Globalfoundries Singapore Pte. Ltd.
 patents
4. 1 out of 858 
 
National University of Singapore
 patents
where one patent can have more than one assignee

Years Active: 1999-2012

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Areas of Expertise:
Dual Contact Etch Stop
Strained Devices
Shallow Trench Isolation
High Performance CMOS
Variable Length Transistors
Asymmetrical Memory Devices
Cobalt Silicidation
Low-Leakage Architecture
Thermal Stability
Micro-Raman Spectroscopy
Dielectric Materials
Sub-Micron Fabrication
21 patents (USPTO):Explore Patents
1. 8148221 - Double anneal with improved reliability for dual contact etch stop liner scheme (2012-04-03),
2. 7615433 - Double anneal with improved reliability for dual contact etch stop liner scheme (2009-11-10),
3. 7545004 - Method and structure for forming strained devices (2009-06-09),
4. 6828082 - Method to pattern small features by using a re-flowable hard mask (2004-12-07),
5. 6762085 - Method of forming a high performance and low cost CMOS device (2004-07-13),
6. 6664156 - Method for forming L-shaped spacers with precise width control (2003-12-16),
7. 6664153 - Method to fabricate a single gate with dual work-functions (2003-12-16),
8. 6653227 - Method of cobalt silicidation using an oxide-Titanium interlayer (2003-11-25),
9. 6632745 - Method of forming almost L-shaped spacer for improved ILD gap fill (2003-10-14),
10. 6632712 - Method of fabricating variable length vertical transistors (2003-10-14),
11. 6544848 - Method to form an asymmetrical non-volatile memory device using small in-situ doped polysilicon spacers (2003-04-08),
12. 6429109 - Method to form high k dielectric and silicide to reduce poly depletion by using a sacrificial metal between oxide and gate (2002-08-06),
13. 6383922 - Thermal stability improvement of CoSi2 film by stuffing in titanium (2002-05-07),
14. 6350661 - Silicon nitride capped shallow trench isolation method for fabricating sub-micron devices with borderless contacts (2002-02-26),
15. 6297126 - Silicon nitride capped shallow trench isolation method for fabricating sub-micron devices with borderless contacts (2001-10-02),

Title: **Eng Hua Lim: Pioneer in Semiconductor Technology**

Introduction

Eng Hua Lim, an accomplished inventor based in Singapore, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 21 patents, Lim is recognized for his innovative approaches to device fabrication, particularly in the development of PFET and NFET transistors.

Latest Patents

One of his latest patents is titled "Double Anneal with Improved Reliability for Dual Contact Etch Stop Liner Scheme." This invention outlines a method for forming devices that utilize both PFET and NFET transistors, employing a PFET compressive etch stop liner and a NFET tensile etch stop liner. The method involves a two-stage annealing process in a deuterium-containing atmosphere, enhancing the reliability of the devices being produced. This groundbreaking technique signifies a step forward in semiconductor manufacturing, demonstrating Lim's commitment to innovation in his field.

Career Highlights

Eng Hua Lim has had a successful career, working with esteemed companies such as Chartered Semiconductor Manufacturing Ltd and IBM. His expertise and leadership in semiconductor fabrication have paved the way for advancements in the industry. Eng Hua Lim's patents have played a crucial role in enhancing device performance and reliability, making him a notable figure in technology development.

Collaborations

Throughout his career, Lim has collaborated with talented individuals, including Soh Yun Siah and Chong Wee Lim. These collaborations have contributed to the success of various projects and had a lasting impact on the field of semiconductor research and development.

Conclusion

Eng Hua Lim's contributions to semiconductor technology are invaluable. His innovative patents, extensive career, and collaborations with other professionals highlight his dedication to advancing the field. As technology continues to evolve, Lim's work will undoubtedly influence future developments in the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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