The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2003
Filed:
Oct. 03, 2002
Chew-Hoe Ang, Singapore, SG;
Eng Hua Lim, Singapore, SG;
Randall Cha, Singapore, SG;
Jia Zhen Zheng, Singapore, SG;
Elgin Quek, Singapore, SG;
Mei Sheng Zhou, Singapore, SG;
Daniel Yen, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
A process for fabricating vertical CMOS devices, featuring variable channel lengths, has been developed. Channel region openings are defined in composite insulator stacks, with the channel length of specific devices determined by the thickness of the composite insulator stack. Selective removal of specific components of the composite insulator stack, in a specific region, allows the depth of the channel openings to be varied. A subsequent epitaxial silicon growth procedure fills the variable depth channel openings, providing the variable length, channel regions for the vertical CMOS devices.