Daniel Yen

This inventor holds 15 USPTO granted patents, primarily in 3D Capacitor Technology. Top assignee: Chartered Semiconductor Manufacturing Ltd (Corporation). Active years: 2002-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniel Yen. Retrieved from https://idiyas.com/inventor/daniel-yen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 15

% Patents Active = 53.3

Average Co-Inventor Count = 5.5

ph-index = 7

Forward Citations = 182(Granted Patents)

Company Filing History:

15 out of 962

Chartered Semiconductor Manufacturing Ltd (Corporation)

patents

Years Active: 2002-2006

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Areas of Expertise:

3D Capacitor

CMOS Devices

Memory Fabrication

Dual Gates

Transistor Gates

Damascene Process

Ion Implantation

Hard Mask

Non-Volatile Memory

Dielectric Materials

Vertical Transistors

Sputtered Metal Deposition

15 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7067869 - Adjustable 3D capacitor (2006-06-27),

2. 6841441 - Method to produce dual gates (one metal and one poly or metal silicide) for CMOS devices using sputtered metal deposition, metallic ion implantation, or silicon implantation, and laser annealing (2005-01-11),

3. 6828082 - Method to pattern small features by using a re-flowable hard mask (2004-12-07),

4. 6803305 - Method for forming a via in a damascene process (2004-10-12),

5. 6713335 - Method of self-aligning a damascene gate structure to isolation regions (2004-03-30),

6. 6689643 - Adjustable 3D capacitor (2004-02-10),

7. 6686279 - Method for reducing gouging during via formation (2004-02-03),

8. 6664153 - Method to fabricate a single gate with dual work-functions (2003-12-16),

9. 6632712 - Method of fabricating variable length vertical transistors (2003-10-14),

10. 6630380 - Method for making three-dimensional metal-insulator-metal capacitors for dynamic random access memory (DRAM) and ferroelectric random access memory (FERAM) (2003-10-07),

11. 6610604 - Method of forming small transistor gates by using self-aligned reverse spacer as a hard mask (2003-08-26),

12. 6610575 - Forming dual gate oxide thickness on vertical transistors by ion implantation (2003-08-26),

13. 6576526 - Darc layer for MIM process integration (2003-06-10),

14. 6544848 - Method to form an asymmetrical non-volatile memory device using small in-situ doped polysilicon spacers (2003-04-08),

15. 6429109 - Method to form high k dielectric and silicide to reduce poly depletion by using a sacrificial metal between oxide and gate (2002-08-06),

Title: The Inventor Profile of Daniel Yen

Introduction: Daniel Yen is a renowned inventor hailing from Singapore, SG, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Daniel Yen holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for a better future.

Career Highlights: With a career spanning over two decades, Daniel Yen has worked with leading tech companies and research institutions, spearheading projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout his career, Daniel Yen has collaborated with top scientists, engineers, and visionaries from around the world, fostering a culture of innovation and excellence in all his endeavors.

Conclusion: Daniel Yen's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the landscape of the future.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]