The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2003
Filed:
Feb. 08, 2002
Applicant:
Inventors:
Chew Hoe Ang, Singapore, SG;
Eng Hua Lim, Singapore, SG;
Randall Cher Liang Cha, Singapore, SG;
Jia Zhen Zheng, Singapore, SG;
Elgin Quek, Singapore, SG;
Mei Sheng Zhou, Singapore, SG;
Daniel Yen, Singapore, SG;
Assignee:
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ; H01L 2/13205 ; H01L 3/1062 ; H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ; H01L 2/13205 ; H01L 3/1062 ; H01L 2/348 ;
Abstract
A method for forming a single gate having a dual work-function is described. A gate electrode is formed overlying a gate dielectric layer on a substrate. Sidewalls of the gate electrode are selectively doped whereby the doped sidewalls have a first work-function and whereby a central portion of the gate electrode not doped has a second work-function to complete formation of a single gate having multiple work-functions in the fabrication of integrated circuits.