The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
Dec. 14, 2001
Jia Zhen Zheng, Singapore, SG;
Elgin Quek, Singapore, SG;
Mei Sheng Zhou, Singapore, SG;
Daniel Yen, Singapore, SG;
Chew Hoe Ang, Singapore, SG;
Eng Hua Lim, Singapore, SG;
Randall Cha, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd, Singapore, SG;
Abstract
A method of forming a gate comprising the following steps. A substrate is provided. A pre-gate structure is formed over the substrate. The pregate structure includes a sacrificial metal layer between an upper gate conductor layer and a lower gate dielectric layer. The pre-gate structure is annealed to form the gate. The gate comprising: an upper silicide layer formed from a portion of the sacrificial metal layer and a portion of the upper gate conductor layer from the anneal; and a lower metal oxide layer formed from a portion of the gate dielectric layer and a portion of the sacrificial metal layer from the anneal.