The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Apr. 12, 2005
Haining S. Yang, Wappingers Falls, NY (US);
Eng Hua Lim, Singapore, SG;
Haining S. Yang, Wappingers Falls, NY (US);
Eng Hua Lim, Singapore, SG;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for manufacturing a device includes mapping extreme vertical boundary conditions of a mask layer based on vertical edges of a deposited first layer and a second layer. The mask layer is deposited over portions of the second layer based on the mapping step. The exposed area of the second layer is etched to form a smooth boundary between the first layer and the second layer. The resist layer is stripped. The resulting device is an improved PFET device and NFET device with a smooth boundary between the first and second layers such that a contact can be formed at the smooth boundary without over etching other areas of the device.