Tempe, AZ, United States of America

Edouard D De Fresart

This inventor holds 20 USPTO granted patents and 1 published patent application, primarily in Power Semiconductor Devices. Top assignees: Freescale Semiconductor,inc., Motorola Corporation, Nxp USA, Inc.. Active years: 1993-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Edouard D De Fresart. Retrieved from https://idiyas.com/inventor/edouard-d-de-fresart

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 20 

% Patents Active = 90.0

Average Co-Inventor Count = 3.1

ph-index = 8

Forward Citations = 372(Granted Patents)


Company Filing History:


Years Active: 1993-2018

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Areas of Expertise:
Trench MOSFET
Power Transistor
Bipolar Transistor
Semiconductor Fabrication
Integrated Circuit
Low On-Resistance
Epitaxial Film
Edge Termination
Current Sense Structure
Gate-Based Resurf
Vertical MOS Transistor
Silicon Carbide Layer
20 patents (USPTO):Explore Patents

Title: Edouard Denis De Fresart: Innovator in Semiconductor Technology

Introduction

Edouard Denis De Fresart is a distinguished inventor based in Tempe, AZ, recognized for his significant contributions to semiconductor technology. With a total of five patents to his name, De Fresart has been a driving force in the advancement of electronic devices, particularly through his innovative designs.

Latest Patents

One of De Fresart's latest patents is the "Trench MOSFET Shield Poly Contact." This innovative device features a recess formed at a semiconductor layer to define a plurality of mesas. An active trench portion of the recess resides between adjacent mesas, while a termination portion of the trench is positioned between the end of each mesa and the perimeter of the recess. The transverse spacing between the mesas, along with the lateral spacing between the mesas and the outer perimeter of the recess, is substantially uniform. A shield structure within the trench extends from the region between the mesas to the area between the ends of the mesas and the outer perimeter of the recess, allowing for enhanced electrical performance. A contact resides between a shield electrode terminal and the shield portion within the trench, facilitating improved functionality.

Career Highlights

Throughout his career, Edouard Denis De Fresart has held positions in esteemed companies, including Freescale Semiconductor, Inc. and NXP USA, Inc. His work at these organizations has solidified his reputation as a skilled inventor and has contributed to his extensive portfolio of patents.

Collaborations

In his journey of innovation, De Fresart has collaborated with notable individuals such as Moaniss Zitouni and Ganming Qin. These collaborations have likely provided valuable insights and expertise, enriching the development of his inventions.

Conclusion

Through his innovative work in semiconductor technology, Edouard Denis De Fresart continues to impact the field significantly. With his latest patents and collaborative efforts, he exemplifies the spirit of invention and the pursuit of technological advancement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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