The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Feb. 12, 2011
Peilin Wang, Beijing, CN;
Jingjing Chen, Torrance, CA (US);
Edouard D. DE Fresart, Tempe, AZ (US);
FREESCALE SEMICONDUCTOR, INC., Austin, TX (US);
Abstract
Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure () includes a trench gate structure (), a lateral gate structure (), a body region () having a first conductivity type, a drain region () and first and second source regions () having a second conductivity type. The first and second source regions () are formed within the body region (). The drain region () is adjacent to the body region () and the first source region () is adjacent to the trench gate structure (), wherein a first portion of the body region () disposed between the first source region () and the drain region () is adjacent to the trench gate structure (). A second portion of the body region () is disposed between the second source region () and the drain region (), and the lateral gate structure () is disposed overlying the second portion of the body region ().