The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Mar. 27, 2015
Freescale Semiconductor, Inc., Austin, TX (US);
Ganming Qin, Chandler, AZ (US);
Edouard D. De Fresart, Tempe, AZ (US);
Pon Sung Ku, Gilbert, AZ (US);
Michael F. Petras, Phoenix, AZ (US);
Moaniss Zitouni, Gilbert, AZ (US);
Dragan Zupac, Chandler, AZ (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A recess is formed at a semiconductor layer of a device to define a plurality of mesas. An active trench portion of the recess residing between adjacent mesas. A termination portion of the trench residing between the end of each mesa and a perimeter of the recess. The transverse spacing between the mesas and the lateral spacing between the mesas and an outer perimeter of a recess forming the mesas are substantially the same. A shield structure within the trench extends from the region between the mesas to the region between the ends of the mesas and the outer perimeter of the recess forming the mesas. A contact resides between a shield electrode terminal and the shield portion residing in the trench.