Dragan Zupac

Title: Dragan Zupac: Innovator in Semiconductor Technology

Introduction

Dragan Zupac is a prominent inventor based in Chandler, AZ (US), known for his significant contributions to semiconductor technology. With a total of 9 patents to his name, he has made remarkable advancements in the field, particularly in the design and functionality of semiconductor devices.

Latest Patents

One of Dragan Zupac's latest patents is the "Trench MOSFET shield poly contact." This innovation involves forming a recess at a semiconductor layer of a device to define a plurality of mesas. An active trench portion of the recess resides between adjacent mesas, while a termination portion of the trench is located between the end of each mesa and the perimeter of the recess. The transverse spacing between the mesas and the lateral spacing between the mesas and the outer perimeter of the recess forming the mesas are substantially the same. A shield structure within the trench extends from the region between the mesas to the region between the ends of the mesas and the outer perimeter of the recess forming the mesas. A contact resides between a shield electrode terminal and the shield portion residing in the trench.

Career Highlights

Throughout his career, Dragan Zupac has worked with notable companies in the semiconductor industry, including Freescale Semiconductor, Inc. and NXP USA, Inc. His work has significantly impacted the development of advanced semiconductor technologies, enhancing the performance and efficiency of various electronic devices.

Collaborations

Dragan has collaborated with esteemed colleagues such as Pon Sung Ku and Ganming Qin, contributing to innovative projects that push the boundaries of semiconductor technology.

Conclusion

Dragan Zupac's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a key innovator. His work continues to influence the industry and pave the way for future advancements in semiconductor devices.