Santa Clara, CA, United States of America

Dengtao Zhao

This inventor holds 67 USPTO granted patents and 11 published patent applications and 1 EPO patent, primarily in Non-Volatile Memory (CPC class G11C). Top assignees: Sandisk Technologies Inc., Western Digital Technologies, Inc., Sandisk Corporation. Active years: 2008-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dengtao Zhao. Retrieved from https://idiyas.com/inventor/dengtao-zhao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 67 

% Patents Active = 88.1

 

Average Co-Inventor Count = 3.5

ph-index = 13

Forward Citations = 714(Granted Patents)

Forward Citations (Not Self Cited) = 660(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Palo Alto, CA (US) (2010)
  • Sunnyvale, CA (US) (2008 - 2015)
  • Milpitas, CA (US) (2021)
  • San Jose, CA (US) (2021 - 2022)
  • Santa Clara, CA (US) (2013 - 2024)
  • Los Gatos, CA (US) (2019 - 2024)
  • Kumar, CA (US) (2023 - 2024)

Company Filing History:


Years Active: 2008-2025

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Areas of Expertise:
Non-Volatile Memory
Precharge Efficiency
Word Line Interference
Data Retention
Temperature Compensation
Erase Method
Bi-Directional Sensing
Dynamic Tier Selection
Program Verification
Solid-State Drives
Multi-Tier Memory
Programming Selection Devices
67 patents (USPTO):Explore Patents

Title: Innovations in Non-Volatile Memory: The Contributions of Dengtao Zhao

Introduction: Dengtao Zhao, based in Santa Clara, CA, is an influential inventor in the field of non-volatile memory technologies. With an impressive portfolio of 62 patents, Zhao has made significant strides in improving memory system capabilities, ensuring more efficient data storage solutions. His work has greatly impacted memory technology, driving forward advancements that benefit various industries.

Latest Patents: Among his latest patents, Zhao's work on "Erase method for non-volatile memory with multiple tiers" showcases a novel method for enhancing erase speeds across multiple tiers of non-volatile memory cells. This innovation allows a larger voltage bias to control the erase process uniformly across differing memory tiers. Another significant patent is focused on "Non-volatile memory with early dummy word line ramp down after precharge." This involves a complex method for programming non-volatile memory cells by managing channel pre-charging and voltage applications, ensuring optimized performance during the programming phase.

Career Highlights: Dengtao Zhao has made notable contributions while working with prominent companies in the industry. He has held positions at Sandisk Technologies Inc. and Western Digital Technologies, Inc., where he contributed to advancements in non-volatile memory technology. His extensive experience in these companies has solidified his reputation as a leading inventor in the field.

Collaborations: Throughout his career, Zhao has collaborated with talented professionals, including Deepanshu Dutta and Nima Mokhlesi. This collaboration has fostered a dynamic work environment, leading to the development of cutting-edge technologies and successful patent applications that address critical needs in memory systems.

Conclusion: Dengtao Zhao's innovations in non-volatile memory technologies represent a significant advancement in the field. His patents reflect a keen understanding of the complexities involved in memory systems, and his collaborations with fellow professionals further underline his commitment to progress. As the demand for efficient and reliable memory solutions continues to grow, Zhao's contributions will undoubtedly play a crucial role in shaping the future of non-volatile memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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